| PART |
Description |
Maker |
| HA2-5137883 HA7-5137883 HA-5137_883 HA4-5137883 FN |
DIODE SCHOTTKY DUAL COMMON-CATHODE 30V 350mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-23 3K/REEL
60MHz/ Ultra Low Noise/ Precision Operational Amplifier
60MHz, Ultra Low Noise, Precision Operational Amplifier
60MHz Ultra Low Noise Precision Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable
Dual, 630MHz, Low Noise Amplifier with Enable
From old datasheet system
630MHz Gain of 5 Low Noise Amplifiers
630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| MAX2650 MAX2650EUS-T |
DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier
Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AA028N1-99 |
230 GHz Low Noise Amplifier
GT 14C 10#12 4#16 SKT PLUG
23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HA1-5104_883 HA-5104883 HA-5104/883 |
Op Amp, Quad 8MHz, Unity Gain Stable, Low Noise, 883 Compliant
Low Noise, High Performance, Quad Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| EC3H04C 1224 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
From old datasheet system
High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
| ZRL-2150 |
IC FLASH 8MX16 90NS TSOP 85
LOW NOISE AMPLIFIER 50з 950 to 2150 MHz
LOW NOISE AMPLIFIER 50 950 to 2150 MHz
|
MINI[Mini-Circuits]
|
